Description
Page 1. HEXFET Power MOSFET. 9/30/04. IRF7402PbF. Description. Parameter. Max. Units. R JA. Maximum Junction-to-Ambient . 50. C/W. Thermal
Part Number | IRF7402TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 20V 6.8A 8-SOIC |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
Vgs(th) (Max) @ Id | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 15V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 35 mOhm @ 4.1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
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