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Description
Datasheet www.irf.com. 1. 3/25/01. IRF7460 . SMPS MOSFET. HEXFET Power MOSFET. Notes through are on page 8. SO-8. Symbol. Parameter. Typ. Max. Units. Mar 25, 2004 C14. 33nF. C11. 15nF. C7. 2x 47uF,16V. C8. 10uF. C12. 3x 330uF, 40m. 6TPB330M, Poscap. 1uH. 1uH. Q4. IRF7460 . Q5. IRF7460 . 2.15K. R2. 1uF. C5. 0.1uF. C7. 3300pF. R3. 13K. Q1. IRF7460 . Q2. IRF7456. L2. 3.3uH. L1. 1uH. C3. 2x 47uF. C4. 47uF. Vtt. 1.25V @ 10A. C6. 2x 150uF. 40m . 12V. PGnd. IRF7460 . Q3. IRF7457. 1uF. Q5. IRF7457. Q4. IRF7457. L2. 1uH. C2. 33uF. Figure 4. IRU3046 configured for two independent outputs. Dual-Phase Mode With Sep 27, 2002 From IRF7460 data sheet we obtain: These values are taken under a certain condition test. For more detail please refer to the IRF7460 and
| Part Number | IRF7460 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 20V 12A 8-SOIC |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 10V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 12A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Image |  |
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