Description
Apr 25, 2000 IRF7464 . SMPS MOSFET. HEXFET Power MOSFET l High frequency DC-DC converters. Benefits. Applications l Low Gate to Drain Charge to 100mA ferrite bead inductor (0805). Fair-Rite 2508051027Y0. N1. 1. 200V, 1.2A n-channel MOSFET. (SO-8) IR IRF7464 . R1. 1. 22.6k 1% resistor (0603). R2. UVLO/EN. UFLG. NOTE: MOSFET N1 = IR IRF7464 . VCC. JU1. 3. 4. 1. 2. 9. +VIN. C12. 15 F. 35V. R14. 14.3k . 1%. C17. OPEN. C9. 100pF. C14. 3900pF. R4. UVLO/EN. UFLG. NOTE: MOSFET N1 = IR IRF7464 . VCC. JU1. 3. 4. 1. 2. 9. +VIN. C12. 15 F. 35V. R14. 14.3k . 1%. C17. OPEN. C9. 100pF. C14. 3900pF. R4. NOTE: MOSFET N1 = IR IRF7464 . VCC. JU1. 3. 4. 1. 2. 9. +VIN. C12. 15 F. 35V. R14. 14.3k . 1%. C17. OPEN. C9. 100pF. C14. 3900pF. R4. 51.1k . R3.
Part Number | IRF7464 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 1.2A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 720mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
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