Part Number | IRF7464TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 1.2A 8-SOIC |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 720mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7464TR
INFIENON
5000
0.9
HITO TECHNOLOGY LIMITED
IRF7464TR
Infinen
8277
2.005
Pujia Electronics Technology Co., Limited
IRF7464TR
INFLNEON
225800
3.11
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7464TR
Infineon Technologies A...
37029
4.215
ATLANTIC TECHNOLOGY LIMITED
IRF7464TR
INFINEON/IR
58578
5.32
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED