Part Number | IRF7464TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 1.2A 8-SOIC |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 730 mOhm @ 720mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7464TRPBF
INFIENON
8015
0.81
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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Infinen
3302
1.8325
Far East Electronics Technology Limited
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INFLNEON
3143
2.855
FLOWER GROUP(HK)CO.,LTD
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Infineon Technologies A...
8769
3.8775
Shenzhen WTX Capacitor Co., Ltd.
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INFINEON/IR
580
4.9
Cicotex Electronics (HK) Limited