Part Number | IRF7467 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 11A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2530pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 12 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7467
INFIENON
4208
1.54
HK HEQING ELECTRONICS LIMITED
IRF7467
Infinen
9927
2.385
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7467
INFLNEON
7555
3.23
HITO TECHNOLOGY LIMITED
IRF7467
Infineon Technologies A...
1873
4.075
Shenzhen WTX Capacitor Co., Ltd.
IRF7467
INFINEON/IR
2238
4.92
Shenzhen Fuxinwei Semiconductor Co., Ltd