Part Number | IRF7473TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 6.9A 8-SOIC |
Series | HEXFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3180pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 26 mOhm @ 4.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Hot Offer
IRF7473TRPBF
INFIENON
9614
1.28
ShenZhen YueXuan Technology Co,.Ltd.
IRF7473TRPBF
Infinen
7477
2.48
ONSTAR ELECTRONICS CO., LIMITED
IRF7473TRPBF
INFLNEON
3304
3.68
Far East Electronics Technology Limited
IRF7473TRPBF
Infineon Technologies A...
9833
4.88
N&S Electronic Co., Limited
IRF7473TRPBF
INFINEON/IR
6117
6.08
HITO TECHNOLOGY LIMITED