Part Number | IRF7492TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 3.7A 8-SOIC |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1820pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 79 mOhm @ 2.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Hot Offer
IRF7492TRPBF
INFIENON
224
0.36
HK FEILIDI ELECTRONIC CO., LIMITED
IRF7492TRPBF
Infinen
28000
1.5675
ShenZhen YueXuan Technology Co,.Ltd.
IRF7492TRPBF
INFLNEON
10020
2.775
Ande Electronics Co., Limited
IRF7492TRPBF
Infineon Technologies A...
3988
3.9825
Belt (HK) Electronics Co
IRF7492TRPBF
INFINEON/IR
5000
5.19
HITO TECHNOLOGY LIMITED