Part Number | IRF7665S2TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 4.1A DFET SB |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta), 14.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 515pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 30W (Tc) |
Rds On (Max) @ Id, Vgs | 62 mOhm @ 8.9A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET SB |
Package / Case | DirectFET,Isometric SB |
Image |
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