Part Number | IRF7701 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 12V 10A 8-TSSOP |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 100nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 5050pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 10A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSSOP |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Image |
IRF7701
INFIENON
225800
0.4
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7701
Infinen
5000
1.5025
HITO TECHNOLOGY LIMITED
IRF7701
INFLNEON
50000
2.605
Yestard Electronics Co,.Ltd.
IRF7701
Infineon Technologies A...
24951
3.7075
ATLANTIC TECHNOLOGY LIMITED
IRF7701
INFINEON/IR
9853
4.81
Viassion Technology Co., Limited