Part Number | IRF7779L2TR1PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 150V 375A DIRECTFET |
Series | HEXFET |
Packaging | Digi-Reel |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6660pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 40A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET L8 |
Package / Case | DirectFET,Isometric L8 |
Image |
IRF7779L2TR1PBF
INFIENON
472
1.6
MY Group (Asia) Limited
IRF7779L2TRPBF
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Top Electronics Co.,
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HK TWO L ELECTRONIC LIMITED
IRF7779
Infineon Technologies A...
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Chip 1 Exchange USA, Inc.
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MY Group (Asia) Limited