Part Number | IRF7807APBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 8.3A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7807APBF
INFIENON
955
1.23
Dynamic Tronics Ltd
IRF7807APBF
Infinen
42800
2.0575
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7807APBF
INFLNEON
5000000
2.885
Hongkong Shengshi Electronics Limited
IRF7807APBF
Infineon Technologies A...
1000
3.7125
MY Group (Asia) Limited
IRF7807APBF
INFINEON/IR
200000
4.54
TERNARY UNION CO., LIMITED