Part Number | IRF7807D1TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 8.3A 8-SOIC |
Series | FETKY |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7807D1TRPBF
INFIENON
226000
1.56
IC Chip Co., Ltd.
IRF7807D1TRPBF
Infinen
29687
2.2575
HK HEQING ELECTRONICS LIMITED
IRF7807D1TRPBF
INFLNEON
42800
2.955
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7807D1TRPBF
Infineon Technologies A...
4868000
3.6525
Shenzhen WTX Capacitor Co., Ltd.
IRF7807D1TRPBF.
INFINEON/IR
43383
4.35
N&S Electronic Co., Limited