Part Number | IRF7807D2TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 8.3A 8-SOIC |
Series | FETKY |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7807D2TRPBF
INFIENON
298
0.81
Gallop Great Holdings (Hong Kong) Limited
IRF7807D2TRPBF
Infinen
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1.235
HK HEQING ELECTRONICS LIMITED
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INFLNEON
850000
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Far East Electronics Technology Limited
IRF7807D2TRPBF
Infineon Technologies A...
3098
2.085
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF7807D2TRPBF
INFINEON/IR
3107
2.51
Nosin (HK) Electronics Co.