Part Number | IRF7807VPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 8.3A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 7A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7807VPBF
INFIENON
10000
0.69
Hong Kong Capital Industrial Co.,Ltd
IRF7807VPBF
Infinen
35800
1.7575
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7807VPBF
INFLNEON
13944
2.825
Ande Electronics Co., Limited
IRF7807VPBF
Infineon Technologies A...
220360
3.8925
Cinty Int'l (HK) Industry Co., Limited
IRF7807VPBF
INFINEON/IR
1000
4.96
MY Group (Asia) Limited