Part Number | IRF7807ZPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | HEX/MOS N-CH 30V 11A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Hot Offer
IRF7807ZPBF
INFIENON
6000
0.54
Shenzhen Baoxing Electronic Technology Co., Ltd
IRF7807ZPBF
Infinen
5000
1.8775
Z.H.T TECHNOLOGY HK LIMITED
IRF7807ZPBF
INFLNEON
35800
3.215
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7807ZPBF
Infineon Technologies A...
1000
4.5525
MY Group (Asia) Limited
IRF7807ZPBF
INFINEON/IR
37500
5.89
Cinty Int'l (HK) Industry Co., Limited