Part Number | IRF7831PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 21A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 21A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 6240pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 3.6 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7831PBF
INFIENON
35800
1.61
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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Infinen
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2.54
MY Group (Asia) Limited
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INFINEON/IR
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