Part Number | IRF7834PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 19A 8-SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 19A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 3710pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 19A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF7834PBF
INFIENON
3081
0.36
Yingxinyuan INT'L (Group) Limited
IRF7834PBF MOS()
Infinen
7021
1.2575
HXY Electronics (HK) Co.,Limited
IRF7834PBF
INFLNEON
1581
2.155
HK FEILIDI ELECTRONIC CO., LIMITED
IRF7834PBF
Infineon Technologies A...
4800
3.0525
SAIPU ELECTRONICS(HK) TECHNOLOGY LIMITED
IRF7834PBF
INFINEON/IR
3000
3.95
ENSPIRE TECHNOLOGY (HONG KONG) CO., LIMITED