Part Number | IRF7853TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 8.3A 8-SOIC |
Series | HEXFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.9V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1640pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 18 mOhm @ 8.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
Hot Offer
IRF7853TRPBF
INFIENON
20000
1
KST Components Limited
IRF7853TRPBF
Infinen
850000
1.675
Far East Electronics Technology Limited
IRF7853TRPBF
INFLNEON
60000
2.35
LOTUS SEMICONDUCTOR CO., LIMITED
IRF7853TRPBF
Infineon Technologies A...
4000
3.025
Superior Electronics Limited
IRF7853TRPBF
INFINEON/IR
18000
3.7
ShenZhen RunJiaXing Electronic Technology Co.,Ltd