(4/5) based on 16 customer reviews
Description
MOSFET 2N-CH 12V 10A 8-SOIC Series: HEXFET? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25～C: 10A Rds On (Max) @ Id, Vgs: 15 mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id: 2V @ 250米A Gate Charge (Qg) @ Vgs: 26nC @ 4.5V Input Capacitance (Ciss) @ Vds: 1730pF @ 6V Power - Max: 2W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | IRF7910PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Infineon Technologies AG |
| Description | MOSFET 2N-CH 12V 10A 8-SOIC |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 8A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 6V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
IRF7910PBF
INFIENON
55300
1.74
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF7910PBF
Infinen
5000000
2.49
Hongkong Shengshi Electronics Limited
IRF7910PBF
INFLNEON
120
3.24
FASEEN TECH LIMITED
IRF7910PbF
Infineon Technologies A...
4195
3.99
Belt (HK) Electronics Co
IRF7910PBF
INFINEON/IR
4868000
4.74
Shenzhen WTX Capacitor Co., Ltd.
