Part Number | IRF7910TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 12V 10A 8SOIC |
Series | HEXFET |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 10A |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 8A, 4.5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1730pF @ 6V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
Hot Offer
IRF7910TRPBF
INFINEON/IR
4302
3.55
Shenzhen Deapea Technology Co., Ltd
IRF7910TRPBF
INFIENON
4620
0.2
HK KK Int'l Co.,Limited
IRF7910TRPBF
Infinen
1425
1.0375
WIN AND WIN ELECTRONICS LIMITED
IRF7910TRPBF
INFLNEON
9688
1.875
Yingxinyuan INT'L (Group) Limited
IRF7910TRPBF
Infineon Technologies A...
3094
2.7125
Shenzhen WTX Capacitor Co., Ltd.