Part Number | IRF8302MTRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 31A MX |
Series | HEXFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 190A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 53nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 6030pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
Rds On (Max) @ Id, Vgs | 1.8 mOhm @ 31A, 10V |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DIRECTFET,MX |
Package / Case | DirectFET,Isometric MX |
Image |
IRF8302MTRPBF
INFIENON
5197
0.33
MY Group (Asia) Limited
IRF8302MTRPBF
Infinen
9436
1.6575
HK HEQING ELECTRONICS LIMITED
IRF8302MTRPBF
INFLNEON
1602
2.985
HONGKONG SINIKO ELECTRONIC LIMITED
IRF8302MTRPBF
Infineon Technologies A...
2407
4.3125
Gallop Great Holdings (Hong Kong) Limited
IRF8302MTRPBF
INFINEON/IR
3111
5.64
CIS Ltd (CHECK IC SOLUTION LIMITED)