Part Number | IRF8313PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 30V 9.7A 8-SOIC |
Series | - |
Packaging | Tube |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9.7A |
Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 9.7A, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 90nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 15V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
Hot Offer
IRF8313PBF
INFIENON
6793
1.39
Splendent Technologies Pte Ltd
IRF8313PBF
Infinen
9919
2.16
Ande Electronics Co., Limited
IRF8313PBF
INFLNEON
3082
2.93
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF8313PBF
Infineon Technologies A...
5895
3.7
Zui Ai Technology Company Limited
IRF8313PBF
INFINEON/IR
7850
4.47
Yingxinyuan INT'L (Group) Limited