(5/5) based on 17 customer reviews
Description
DATASHEET IRF840S , SiHF840S www.vishay.com. Vishay Siliconix. S16-0754-Rev. D, 02- May-16. 1. Document Number: 91071. For technical questions, contact: 62. /W. Data & specifications subject to change without notice. Parameter. Storage Temperature Range. -55 to 150. Parameter. Linear Derating Factor. IRF840 . IRF440-443/ IRF840 -843. MTM7N45/7N50. N-Channel Power MOSFETs. 8A, 450V/500V www.artschip.com. 1. Description. These devices are n-channel, Inductor, 2.0mH, 3.0Apk. L3A,L3B. 25. 3. Intl Rectifier. IRF840 . Transistor, MOSFET. M1, M2, M3. 26. 6. RG Allen. CR32C684JT. Resistor, 680K ohm SMT 1206. IRF840 . 1N5818 1N5818. CCK. 3.9k. SHDN. VIN. VC. RCK. E. 43k. 3300pF. L2. 22nH. 4V. 0.48V. 1 F. 8.2k. 4V. 12V. 470k. 75k. 0.8 . BAT-85. 22k. HV. 12V.
| Part Number | IRF840S |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 500V 8A D2PAK |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 850 mOhm @ 4.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
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