(4/5) based on 6 customer reviews
Description
MOSFET 2N-CH 30V 8A/11A 8-SOIC Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 8A, 11A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.35V @ 25米A Gate Charge (Qg) @ Vgs: 8.6nC @ 4.5V Input Capacitance (Ciss) @ Vds: 766pF @ 15V Power - Max: 1.5W, 2.4W Operating Temperature: -55～C ~ 175～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | IRF8513PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Infineon Technologies AG |
| Description | MOSFET 2N-CH 30V 8A/11A 8-SOIC |
| Series | - |
| Packaging | Tube |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 11A |
| Rds On (Max) @ Id, Vgs | 15.5 mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 766pF @ 15V |
| Power - Max | 1.5W, 2.4W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
IRF8513PBF
INFIENON
3035
1.72
SUNTOP SEMICONDUCTOR CO., LIMITED
IRF8513PBF
Infinen
55300
2.5875
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF8513PBF
INFLNEON
1000
3.455
Yingxinyuan INT'L (Group) Limited
IRF8513PBF MOS()
Infineon Technologies A...
2760
4.3225
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF8513PBF
INFINEON/IR
26
5.19
Cicotex Electronics (HK) Limited
