Description
Datasheet www.irf.com. 1. 08/1/07. IRF8736PbF. HEXFET Power MOSFET. Notes through are on page 9. Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge. Nov 22, 2013 Tube/Bulk. 95. IRF8736PbF-1. Tape and Reel. 4000. IRF8736TRPbF -1. Package Type. Standard Pack. Orderable Part Number. IRF8736PbF-1.
Part Number | IRF8736TRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 18A 8-SOIC |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.35V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2315pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
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