Part Number | IRF8788PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 24A 8-SO |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.35V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 66nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 5720pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 24A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF8788PBF
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1.85
IC Chip Co., Ltd.
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2.6925
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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4868000
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Shenzhen WTX Capacitor Co., Ltd.
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Infineon Technologies A...
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Yingxinyuan INT'L (Group) Limited
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5.22
CIS Ltd (CHECK IC SOLUTION LIMITED)