Part Number | IRF8910GTRPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2N-CH 20V 10A 8-SOIC |
Series | HEXFET |
Packaging | |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10A |
Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id | 2.55V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
IRF8910GTRPBF
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