Part Number | IRF9332PBF MOS() |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 30V 9.8A 8SOIC |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 9.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.4V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1270pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta) |
Rds On (Max) @ Id, Vgs | 17.5 mOhm @ 9.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
IRF9332PBF
INFIENON
432
1.54
IC Chip Co., Ltd.
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Infinen
6403
2.37
HK HEQING ELECTRONICS LIMITED
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INFLNEON
3277
3.2
CIS Ltd (CHECK IC SOLUTION LIMITED)
IRF9332PBF
Infineon Technologies A...
9758
4.03
Ande Electronics Co., Limited
IRF9332PBF
INFINEON/IR
3335
4.86
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED