Infineon Technologies AG

Description

May 13, 1998 IRF9520N . HEXFET Power MOSFET. PD - 91521A. Fifth Generation HEXFETs from International Rectifier utilize advanced processing Jun 15, 2004 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per IRF9520 . International. @ Rectifier. HEXFET Power MOSFET. 0 Dynamic dv/dt Rating. 0 Repetitive Avalanche Rated. 0 P-Channel . 0 175 C Operating Mar 16, 1998 Uses IRF9520N data and test conditions. Pulse width 300 s; duty cycle 2%. Source-Drain Ratings and Characteristics. A. -5.5. -27. S. Dec 14, 2004 LS. Internal Source Inductance. . . IGSS ns. 4.5. 7.5. IDSS. Drain-to- Source Leakage Current. S. D. G. Uses IRF9520N data and test