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Description
DATASHEET May 13, 1998 IRF9530N . HEXFET Power MOSFET. PD - 91482C. Fifth Generation HEXFETs from International Rectifier utilize advanced processing May 27, 2016 Uses IRF9530N data and test conditions. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and Note 8: dv/dt = 330 x 10-9/CSLEW (V/ms), nMOS device used for measurement was IRF9530N . Slew rate is measured at the load. (VCC = 5V, CL = 1 F, CSLEW Nov 28, 2012 TIM R. PRODUCTION. 1. 11-28-12. __. C12. TBD. C12. TBD. R29. 100K. R29. 100K. R1. 10K. R1. 10K. Q1. IRF9530N . Q1. IRF9530N . G. D. S.
| Part Number | IRF9530N |
| Brand | Infineon Technologies AG |
| Image |  |
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