Description
Apr 2, 2004 IRF9530NPbF . HEXFET Power MOSFET. PD - 94980. Fifth Generation HEXFETs from International Rectifier utilize advanced processing May 13, 1998 Page 1. IRF9530N. HEXFET Power MOSFET. PD - 91482C. Fifth Generation HEXFETs from International Rectifier utilize advanced
Part Number | IRF9530NPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 100V 14A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 79W (Tc) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 8.4A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
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