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Description
IRF9540S , SiHF9540S. Vishay Siliconix. FEATURES. Halogen-free According to IEC 61249-2-21. Definition. Surface Mount. Available in Tape and Reel. May 13, 1998 Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ -10V. -23. ID @ TC = 100 C. Continuous Drain Current, VGS @ - DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Aug 18, 2004 Dual Input Pair Zaps. Common-Mode Noise Pickup. The simple circuit in Figure 1a is especially effective in removing com- mon mode noise DESCRIPTION. Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low
| Part Number | IRF9540S |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET P-CH 100V 19A D2PAK |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 61nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 11A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
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