Part Number | IRF9953TR |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Infineon Technologies AG |
Description | MOSFET 2P-CH 30V 2.3A 8-SOIC |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.3A |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |
Image |
IRF9953TR
INFIENON
8112
1.61
HK HEQING ELECTRONICS LIMITED
IRF9953TR
Infinen
3012
2.835
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
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INFLNEON
4013
4.06
Yingxinyuan INT'L (Group) Limited
IRF9953TR(white)
Infineon Technologies A...
6158
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Ande Electronics Co., Limited
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INFINEON/IR
8411
6.51
Innovation Best Electronics Technology Limited