Part Number | IRF9Z24NSTRL |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 55V 12A D2PAK |
Series | HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 7.2A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRF9Z24NSTRL
INFIENON
33900
1.8
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IRF9Z24NSTRL
Infinen
220360
2.9625
Cinty Int'l (HK) Industry Co., Limited
IRF9Z24NSTRL
INFLNEON
100
4.125
Yingxinyuan INT'L (Group) Limited
IRF9Z24NSTRL
Infineon Technologies A...
11300
5.2875
N&S Electronic Co., Limited
IRF9Z24NSTRL
INFINEON/IR
21300
6.45
N&S Electronic Co., Limited