Description
Datasheet Mar 21, 2011 Lead (Pb)-free. IRF9Z34PbF. SiHF9Z34-E3. SnPb. IRF9Z34 . SiHF9Z34. ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted). Sep 15, 2008 Uses IRF9Z34 , SiHF9Z34 data and test conditions. PRODUCT SUMMARY. VDS ( V). - 60. RDS(on) ( ). VGS = - 10 V. 0.14. Qg (Max.) (nC). 34. Application Report. SLVA252B September 2006 Revised November 2007. Application of the MC34063 Switching Regulator. Shafi Sekander and Mahmoud Aug 25, 1997 Uses IRF9Z34 data and test conditions. Parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. DESIGNfeature. 14 Power Electronics Technology | May 2009 www. powerelectronics.com. Using the latest generation of trench and polar power MOSFET tech-.
Part Number | IRF9Z34 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 60V 18A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 88W (Tc) |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRF9Z34
INFIENON
50000
1.13
HK HEQING ELECTRONICS LIMITED
IRF9Z34
Infinen
239742
2.2175
Cicotex Electronics (HK) Limited
IRF9Z34
INFLNEON
3724
3.305
Belt (HK) Electronics Co
IRF9Z34
Infineon Technologies A...
56690
4.3925
Gallop Great Holdings (Hong Kong) Limited
IRF9Z34
INFINEON/IR
5876
5.48
Analog Technology Limited