Part Number | IRF9Z34NL |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 55V 19A TO-262 |
Series | HEXFET |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 620pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 10A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
IRF9Z34NL
INFIENON
408
0.38
Hong Kong In Fortune Electronics Co., Limited
IRF9Z34NL
Infinen
1000
1.645
MY Group (Asia) Limited
? IRF9Z34NL
INFLNEON
13508
2.91
Xia Song Electronics Co., Limited
IRF9Z34NL
Infineon Technologies A...
13800
4.175
A & C Int'l Electronics Co.
IRF9Z34NL
INFINEON/IR
5000
5.44
G Trader Limited