Description
Feb 5, 2011 Absolute Maximum Ratings. Symbol. Parameter. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ 10V (Silicon Limited). A. ID @ TC the need for higher density power supplies continues to grow. The new IRFB/S/ SL3206,. IRFB3077 , and IRFB4110 MOSFETs enable improved power density by May 15, 2012 VCES. Collector-emitter voltage (VBE = 0). 700. V. VCEO. Collector-emitter voltage (IB = 0). 400. V. VEBO. Emitter-base voltage (IC = 0). 9. V. IC. IRFB3077 . 5.8. IRFH5007. 5 x 6 B. IRFS3307Z. IRFB3307Z. 80. 10. IRF6646. MN. 13.4. 100. 3.5. IRF7769L1. L8. 4. IRFS4010-7P. 4.7. IRFS4010. IRFB4110. 9. Sep 27, 2007 MOSFETs ( IRFB3077 ). The two MOSFETs are connected in antiseries with drains to the outside switch power connections, the two gates
Part Number | IRFB3077 |
Brand | Infineon Technologies AG |
Image |
IRFB3077
INFIENON
32365
1.83
HK HEQING ELECTRONICS LIMITED
IRFB3077
Infinen
2292
2.375
Agreat Technology (Hong Kong) Co., Limited
IRFB3077
INFLNEON
10000
2.92
Shenzhen Qiangneng Electronics Co., Ltd.
IRFB3077
Infineon Technologies A...
200000
3.465
Shenzhen WTX Capacitor Co., Ltd.
IRFB3077
INFINEON/IR
3725
4.01
Belt (HK) Electronics Co