Part Number | IRFB3206GPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 120A TO220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6540pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 3 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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IRFB3206GPBF
INFIENON
8375
0.33
Hong Kong Capital Industrial Co.,Ltd
IRFB3206GPBF
Infinen
6709
1.345
Cinty Int'l (HK) Industry Co., Limited
IRFB3206GPBF
INFLNEON
9165
2.36
RX ELECTRONICS LIMITED
IRFB3206GPBF
Infineon Technologies A...
1377
3.375
Nosin (HK) Electronics Co.
IRFB3206GPBF
INFINEON/IR
632
4.39
CIS Ltd (CHECK IC SOLUTION LIMITED)