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Description
DATASHEET Jan 20, 2012 Avalanche SOA l Enhanced body diode dV/dt and dI/dt. Capability www.irf.com. 1 . IRFB3607PbF . IRFS3607PbF. IRFSL3607PbF. Applications. IRFB3207ZPBF. IR. 0. Q4, Q5, Q6. MOSFET, Nchan, Pattern only. TO-220AB. 1. Q7. IRFB3607PBF . MOSFET, Nchan, 75V, 80A, 9 m . TO-220AB. IRFB3607PBF . IRFS3307zPBF. IRFH5007TRPBF. 8.5. IRFH7107TRPBF. 8.8. IRFB3507PBF. IRFSL3507PBF. IRFS3507PBF. 9. IRFB3607PBF . IRFSL3607PBF. IRFS3607PBF. T0-220. IRFP3077PBF. 75. 3.3. 210. 160. T0-247. IRF2907ZS-7PPBF. 75. 3.8. 180. 170. D2PAK-7. IRFS3207ZPBF. 75. 4.1. 170. 120. D2PAK. IRFB3607PBF . 75. 2.0. 75V. 5-20. IRF6646TRPBF. 9.5. IRFH5207TRPBF. 9.6. IRFR2607ZPBF. 22.0. IRFS3607PBF. 9.0. IRFB3607PBF . 9.0. IRFH7107TRPBF. 8.5. IRFR2307ZPBF.
| Part Number | IRFB3607PBF |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 75V 80A TO-220AB |
| Series | HEXFET |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 46A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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