Part Number | IRFB4127PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 76A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5380pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 44A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
IRFB4127PBF
INFIENON
2124
0.53
LIXINC Electronics Co., Limited
IRFB4127PBF
Infinen
8598
1.41
Cinty Int'l (HK) Industry Co., Limited
IRFB4127PBF
INFLNEON
4581
2.29
Hongkong Teng Yun Tai (International) co.,Limited
IRFB4127PBF
Infineon Technologies A...
1979
3.17
HEXING TECHNOLOGY (HK) LIMITED
IRFB4127PBF
INFINEON/IR
8573
4.05
ACHIEVE ELECTRONICS CO., LIMITED