Description
May 7, 2001 IRFB42N20D . 2 www.irf.com. Parameter. Min. Typ. Max. Units. Conditions gfs. Forward Transconductance. 21. . S. VDS = 50V, ID = Mar 5, 2001 IRFB42N20D . IRFS42N20D. IRFSL42N20D. SMPS MOSFET. HEXFET Power MOSFET l High frequency DC-DC converters. Benefits.
Part Number | IRFB42N20D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 44A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3430pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.4W (Ta), 330W (Tc) |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 26A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRFB42N20D
INFIENON
153
1.74
Yingxinyuan INT'L (Group) Limited
IRFB42N20D
Infinen
274707
2.82
Cicotex Electronics (HK) Limited
IRFB42N20D
INFLNEON
11401
3.9
N&S Electronic Co., Limited
IRFB42N20D
Infineon Technologies A...
20000
4.98
Redstar Electronic Limited
IRFB42N20D FB42N20D
INFINEON/IR
12800
6.06
Ande Electronics Co., Limited