Part Number | IRFB4310PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 130A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7670pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 75A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
Hot Offer
IRFB4310PBF
INFIENON
24500
1.01
HEXING TECHNOLOGY (HK) LIMITED
IRFB4310PBF
Infinen
12030
2.25
ONSTAR ELECTRONICS CO., LIMITED
IRFB4310PBF
INFLNEON
5000
3.49
Splendent Technologies Pte Ltd
IRFB4310PBF
Infineon Technologies A...
10000
4.73
Shenzhen Dingsheng Fengtai Technology Co., Ltd.
TRANS IRFB4310PBF
INFINEON/IR
5000
5.97
Anterwell Technology Ltd