Description
May 2, 2007 IRFSL4410. IRFB4410 . IRFS4410. IRFSL4410. HEXFET Power MOSFET. Applications l High Efficiency Synchronous Rectification in SMPS. Apr 25, 2014 Page 1. HEXFET Power MOSFET. S. D. G. Benefits l Improved Gate, Avalanche and Dynamic dV/dt. Ruggedness l Fully Characterized Apr 28, 2014 Page 1. Benefits l Improved Gate, Avalanche and Dynamic dv/dt. Ruggedness l Fully Characterized Capacitance and Avalanche. SOA. IRFB4410 Ciss = 5.15nF. IRFB4110 Ciss = 9.62nF. Figure 21: minimum external gate resistor vs. gate loop inductance for some MOSFETs. It is evident how a IRFB4410 . 96. 100. 250. 0.008. IRFB4110. 120. 100. 370. 0.0037. IRFB4310. 140 . 100. 330. 0.056. IRFB4615. 35. 150. 144. 0.032. IRFB41N15D. 41. 150. 200.
Part Number | IRFB4410 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 96A TO-220AB |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5150pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 58A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
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