Part Number | IRFBA90N20DPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 98A SUPER-220 |
Series | HEXFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 6080pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 650W (Tc) |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 59A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | SUPER-220,(TO-273AA) |
Package / Case | Super-220,3 (Straight Leads) |
Image |
IRFBA90N20DPBF
INFIENON
55
1.75
FLOWER GROUP(HK)CO.,LTD
IRFBA90N20DPBF
Infinen
11400
2.82
N&S Electronic Co., Limited
IRFBA90N20DPBF
INFLNEON
3000
3.89
HONGKONG SINIKO ELECTRONIC LIMITED
IRFBA90N20DPBF
Infineon Technologies A...
10000
4.96
HONGKONG SINIKO ELECTRONIC LIMITED
IRFBA90N20DPBF
INFINEON/IR
500000
6.03
VBsemi Electronics Co., Limited