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Description
IRFBE30 , SiHFBE30. Vishay Siliconix. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; Page 1. Document Number: 90443 www.vishay.com. Revision: 20-Apr-10. 1. R-C Thermal Model Parameters. IRFBE30_RC, SiHFBE30_RC. Vishay Siliconix. IRFBE30 . MOSFET, N-ch, 800-V, 4.1-A, 3-Ohms. TO-220V. IRFBE30 . International Rectifier. 2. R10, R12. 1k. Resistor, Chip, 1/16W, 1%. 0603. Std. Std. 1. R100. IRFBE30 . 800. 3000. 4.1. 2.6. 52. 30. 2. 125. IRFBE30PBF. 800. 3000. 4.1. 2.6. 52. 30. 2. 125. IRFBE20. 800. 6500. 1.8. 1.2. 25.3. 14. 2.3. 54. IRFBE20PBF. 800. Jul 7, 2005 IRFBE30 . MOSFET 900V. C1, C2. Panasonic. ECU-S2A222KBA. 2200pF, 5%, 100V, X7R. C3, C4. Panasonic. EEU-FCIC821S. 820 F, 16V
| Part Number | IRFBE30 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 800V 4.1A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 78nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 2.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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