Part Number | IRFD9210 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 200V 0.4A 4-DIP |
Series | - |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 400mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 240mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |
Image |
IRFD9210
INFIENON
37459
1.06
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
IRFD9210
Infinen
7822
1.9875
Honestwin Technology Co., Limited
IRFD9210
INFLNEON
13000
2.915
CRYSTALTEK CO., LIMITED
IRFD9210
Infineon Technologies A...
1230
3.8425
Luobei Electronics Co., Limited
IRFD9210
INFINEON/IR
6632
4.77
Zhongke Shendian Semiconductor (Shenzhen) Group Co., Ltd.