Part Number | IRFH5015TR2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 150V 10A 8VQFN |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 50V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 156W (Tc) |
Rds On (Max) @ Id, Vgs | 31 mOhm @ 34A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) Single Die |
Package / Case | 8-VQFN |
Image |
IRFH5015TR2PBF
INFIENON
40178
1.41
IC Chip Co., Ltd.
IRFH5015TR2PBF
Infinen
5138
2.1375
Dedicate Electronics (HK) Limited
IRFH5015TR2PBF
INFLNEON
8977
2.865
HK HEQING ELECTRONICS LIMITED
IRFH5015TR2PBF
Infineon Technologies A...
16000
3.5925
Finestock Electronics HK Limited
IRFH5015TR2PBF
INFINEON/IR
9977
4.32
CIS Ltd (CHECK IC SOLUTION LIMITED)