Part Number | IRFH5020TR2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 5.1A 8VQFN |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2290pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 8.3W (Tc) |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 7.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) Single Die |
Package / Case | 8-VQFN |
Image |
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