Part Number | IRFH5110TR2PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 5X6 PQFN |
Series | HEXFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 63A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3152pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) |
Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 37A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PQFN (5x6) |
Package / Case | 8-PowerVDFN |
Image |
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